Beilstein J. Nanotechnol.2018,9, 2255–2264, doi:10.3762/bjnano.9.210
doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si.
Keywords: energy offset; impuritydopingalternative; ultrasmall nanoscale silicon crystals; wires and devices; Introduction
Impurity
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Figure 1:
Energy offsets with SiO2- and Si3N4-embedding for one Si10-NC (0.8 nm size) embedded in SiO2 and th...